IPB47N10SL26ATMA1

Technical Details

• Series:SIPMOS®
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):100 V
• Current - Continuous Drain (Id) @ 25°C:47A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:26mOhm @ 33A, 10V
• Vgs(th) (Max) @ Id:2V @ 2mA

• Gate Charge (Qg) (Max) @ Vgs:135 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):175W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:PG-TO263-3
• Package / Case:TO-263-4, D²Pak (3 Leads + Tab), TO-263AA