IRFB61N15DPBF

Rochester Electronics
In Stock: 155

Can ship immediately

Pricing:
  • 1$1.1
  • 50$0.887
  • 100$0.79828
  • 500$0.62089
  • 1,000$0.51445

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Technical Details

  • Series:HEXFET®
  • Package:Bulk
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):150 V
  • Current - Continuous Drain (Id) @ 25°C:60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:32mOhm @ 36A, 10V
  • Vgs(th) (Max) @ Id:5.5V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:140 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:3470 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):2.4W (Ta), 330W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220AB
  • Package / Case:TO-220-3

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