SCTWA35N65G2V

Technical Details

• Series:-
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss):650 V
• Current - Continuous Drain (Id) @ 25°C:45A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):18V, 20V
• Rds On (Max) @ Id, Vgs:72mOhm @ 20A, 20V
• Vgs(th) (Max) @ Id:3.2V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:73 nC @ 20 V
• Vgs (Max):+20V, -5V
• Input Capacitance (Ciss) (Max) @ Vds:73000 pF @ 400 V
• FET Feature:-
• Power Dissipation (Max):208W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-247 Long Leads
• Package / Case:TO-247-3