In Stock: 131

Can ship immediately

Pricing:
  • 1$19.67
  • 10$18.19702
  • 100$15.541

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Technical Details

  • Series:-
  • Package:Tube
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):8V
  • Rds On (Max) @ Id, Vgs:180mOhm @ 11A, 8V
  • Vgs(th) (Max) @ Id:2.6V @ 500µA

 

  • Gate Charge (Qg) (Max) @ Vgs:9.3 nC @ 4.5 V
  • Vgs (Max):±18V
  • Input Capacitance (Ciss) (Max) @ Vds:760 pF @ 480 V
  • FET Feature:-
  • Power Dissipation (Max):96W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220-3
  • Package / Case:TO-220-3

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