SSM3J325F,LF
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 20V 2A S-MINI
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SSM3J325F,LF Datasheet
-
ECAD Model
- Share
In Stock: 525
Can ship immediately
Pricing:
- 1$0.43
- 3,000$0.07551
- 6,000$0.06796
- 15,000$0.06041
- 30,000$0.05663
- 75,000$0.05286
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Technical Details
- Series:U-MOSVI
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:150mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id:-
- Gate Charge (Qg) (Max) @ Vgs:4.6 nC @ 4.5 V
- Vgs (Max):±8V
- Input Capacitance (Ciss) (Max) @ Vds:270 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):600mW (Ta)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:S-Mini
- Package / Case:TO-236-3, SC-59, SOT-23-3
