SQ2301ES-T1_GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 20V 3.9A TO236
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SQ2301ES-T1_GE3 Datasheet
-
ECAD Model
- Share
In Stock: 659
Can ship immediately
Pricing:
- 1$0.46
- 3,000$0.17713
- 6,000$0.16634
- 15,000$0.15554
- 30,000$0.14799
Quote It
Technical Details
- Series:Automotive, AEC-Q101, TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:3.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:120mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id:1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:8 nC @ 4.5 V
- Vgs (Max):±8V
- Input Capacitance (Ciss) (Max) @ Vds:425 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):3W (Tc)
- Operating Temperature:-55°C ~ 175°C (TA)
- Mounting Type:Surface Mount
- Supplier Device Package:TO-236 (SOT-23)
- Package / Case:TO-236-3, SC-59, SOT-23-3
