RTU002P02T106

ROHM Semiconductor
In Stock: 660

Can ship immediately

Pricing:
  • 1$0.54
  • 3,000$0.14393
  • 6,000$0.13521
  • 15,000$0.12648
  • 30,000$0.12212

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Technical Details

  • Series:-
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Not For New Designs
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:250mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs:1.5Ohm @ 250mA, 4.5V
  • Vgs(th) (Max) @ Id:2V @ 1mA

 

  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±12V
  • Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):200mW (Ta)
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:UMT3
  • Package / Case:SC-70, SOT-323

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