SQ2309ES-T1_GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 60V 1.7A TO236
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SQ2309ES-T1_GE3 Datasheet
-
ECAD Model
- Share
In Stock: 943
Can ship immediately
Pricing:
- 1$0.58
- 3,000$0.22434
- 6,000$0.21066
- 15,000$0.19699
- 30,000$0.18742
Quote It
Technical Details
- Series:Automotive, AEC-Q101, TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:1.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:336mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id:2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:8.5 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:265 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):2W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:TO-236 (SOT-23)
- Package / Case:TO-236-3, SC-59, SOT-23-3
