PSMN102-200Y,115
Nexperia
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 200V 21.5A LFPAK56
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet PSMN102-200Y,115 Datasheet
-
ECAD Model
- Share
In Stock: 181
Can ship immediately
Pricing:
- 1$1.1
- 1,500$0.64301
- 3,000$0.60014
- 7,500$0.57013
- 10,500$0.5487
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Technical Details
- Series:TrenchMOS™
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):200 V
- Current - Continuous Drain (Id) @ 25°C:21.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:102mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:30.7 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1568 pF @ 30 V
- FET Feature:-
- Power Dissipation (Max):113W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:LFPAK56, Power-SO8
- Package / Case:SC-100, SOT-669
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