NVTFWS9D6P04M8LTAG

Technical Details

• Series:-
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:13A (Ta), 64A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:9.5mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id:2.4V @ 580µA

• Gate Charge (Qg) (Max) @ Vgs:34.6 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:2312 pF @ 20 V
• FET Feature:-
• Power Dissipation (Max):3.2W (Ta), 75W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:8-WDFN (3.3x3.3)
• Package / Case:8-PowerWDFN