IRF510STRRPBF
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 100V 5.6A TO263
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRF510STRRPBF Datasheet
-
ECAD Model
- Share
In Stock: 688
Can ship immediately
Pricing:
- 1$1.42
- 800$0.78303
- 1,600$0.71147
- 2,400$0.66676
- 5,600$0.63545
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:5.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:540mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:8.3 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:180 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):3.7W (Ta), 43W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:TO-263 (D²Pak)
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
