STH160N4LF6-2

Technical Details

• Series:DeepGATE™, STripFET™ VI
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):5V, 10V
• Rds On (Max) @ Id, Vgs:2.2mOhm @ 60A, 10V
• Vgs(th) (Max) @ Id:1V @ 250µA (Min)

• Gate Charge (Qg) (Max) @ Vgs:181 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:8130 pF @ 20 V
• FET Feature:-
• Power Dissipation (Max):150W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:H2Pak-2
• Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB