NTTFS1D2N02P1E

Technical Details

• Series:-
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):25 V
• Current - Continuous Drain (Id) @ 25°C:23A (Ta), 180A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:1mOhm @ 38A, 10V
• Vgs(th) (Max) @ Id:2V @ 934µA

• Gate Charge (Qg) (Max) @ Vgs:24 nC @ 4.5 V
• Vgs (Max):+16V, -12V
• Input Capacitance (Ciss) (Max) @ Vds:4040 pF @ 13 V
• FET Feature:-
• Power Dissipation (Max):820mW (Ta), 52W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:8-PQFN (3.3x3.3)
• Package / Case:8-PowerWDFN