PSMN1R0-40YSHX

Technical Details

• Series:-
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:290A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:1mOhm @ 25A, 10V
• Vgs(th) (Max) @ Id:3.6V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:122 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:9433 pF @ 20 V
• FET Feature:Schottky Diode (Body)
• Power Dissipation (Max):333W (Ta)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:LFPAK56, Power-SO8
• Package / Case:SOT-1023, 4-LFPAK