SUD35N10-26P-E3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 100V 35A TO252
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SUD35N10-26P-E3 Datasheet
-
ECAD Model
- Share
In Stock: 693
Can ship immediately
Pricing:
- 1$2.28
- 2,000$1.08038
- 6,000$1.04036
- 10,000$1.01854
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Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):7V, 10V
- Rds On (Max) @ Id, Vgs:26mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:4.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:47 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:2000 pF @ 12 V
- FET Feature:-
- Power Dissipation (Max):8.3W (Ta), 83W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:TO-252
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
