SIDR626DP-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 60V 42.8A/100A PPAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SIDR626DP-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 161
Can ship immediately
Pricing:
- 1$2.98
- 3,000$1.41548
- 6,000$1.36305
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Technical Details
- Series:TrenchFET® Gen IV
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:42.8A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):6V, 10V
- Rds On (Max) @ Id, Vgs:1.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:3.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:102 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:5130 pF @ 30 V
- FET Feature:-
- Power Dissipation (Max):6.25W (Ta), 125W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PowerPAK® SO-8DC
- Package / Case:PowerPAK® SO-8
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