TSM80N1R2CI C0G
TSC (Taiwan Semiconductor)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 800V 5.5A ITO220AB
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TSM80N1R2CI C0G Datasheet
-
ECAD Model
- Share
In Stock: 1,162
Can ship immediately
Pricing:
- 1$3.19
- 10$2.87567
- 100$2.3108
- 500$1.7973
- 1,000$1.48918
- 3,000$1.43783
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Technical Details
- Series:-
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):800 V
- Current - Continuous Drain (Id) @ 25°C:5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:1.2Ohm @ 1.8A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:19.4 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:685 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):25W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:ITO-220AB
- Package / Case:TO-220-3 Full Pack, Isolated Tab
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