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Technical Details

  • Series:POWER MOS 8™
  • Package:Tube
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):1200 V
  • Current - Continuous Drain (Id) @ 25°C:4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:4.2Ohm @ 2A, 10V
  • Vgs(th) (Max) @ Id:5V @ 500µA

 

  • Gate Charge (Qg) (Max) @ Vgs:43 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:1385 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):175W (Tc)
  • Operating Temperature:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:D3Pak
  • Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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