RJ1G12BGNTLL

Technical Details

• Series:-
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:1.86mOhm @ 50A, 10V
• Vgs(th) (Max) @ Id:2.5V @ 2mA

• Gate Charge (Qg) (Max) @ Vgs:165 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:12500 pF @ 20 V
• FET Feature:-
• Power Dissipation (Max):178W (Tc)
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:LPTL
• Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB