STB21NM50N-1
STMicroelectronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 500V 18A I2PAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet STB21NM50N-1 Datasheet
-
ECAD Model
- Share
In Stock: 159
Can ship immediately
Pricing:
- 1$5.7
- 50$4.5817
- 100$4.17452
- 500$3.38031
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Technical Details
- Series:MDmesh™ II
- Package:Tube
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):500 V
- Current - Continuous Drain (Id) @ 25°C:18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:190mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:65 nC @ 10 V
- Vgs (Max):±25V
- Input Capacitance (Ciss) (Max) @ Vds:1950 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):140W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:I2PAK
- Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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