NCV8440ASTT1G
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionPOWER FIELD-EFFECT TRANSISTOR, 2
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet NCV8440ASTT1G Datasheet
-
ECAD Model
- Share
In Stock: 871
Can ship immediately
Pricing:
- 1$0.42
- 1,000$0.198
- 2,000$0.1848
- 5,000$0.17556
- 10,000$0.16896
Quote It
Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):59 V
- Current - Continuous Drain (Id) @ 25°C:2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):3.5V, 10V
- Rds On (Max) @ Id, Vgs:110mOhm @ 2.6A, 10V
- Vgs(th) (Max) @ Id:1.9V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:4.5 nC @ 4.5 V
- Vgs (Max):±15V
- Input Capacitance (Ciss) (Max) @ Vds:155 pF @ 35 V
- FET Feature:-
- Power Dissipation (Max):1.69W (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:SOT-223
- Package / Case:TO-261-4, TO-261AA
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