IPN95R2K0P7ATMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 950V 4A SOT223
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPN95R2K0P7ATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 1,068
Can ship immediately
Pricing:
- 1$1
- 3,000$0.52134
- 6,000$0.49814
- 15,000$0.48156
Quote It
Technical Details
- Series:CoolMOS™ P7
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):950 V
- Current - Continuous Drain (Id) @ 25°C:4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:2Ohm @ 1.7A, 10V
- Vgs(th) (Max) @ Id:3.5V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:330 pF @ 400 V
- FET Feature:-
- Power Dissipation (Max):7W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-SOT223
- Package / Case:TO-261-3
Related Products
MOSFET N-CH 55V 42A DPAK
- 1: $1.00000
SPB07N60 - 600V COOLMOS N-CHANNE
- 1: $1.00000
MOSFET N-CH 40V 75A TO220AB
- 1: $1.02000
IPA60R385 - 600V COOLMOS N-CHANN
- 1: $1.02000
