FQPF47P06YDTU

Rochester Electronics
In Stock: 181

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Pricing:
  • 1$1.07
  • 800$1.07

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Technical Details

  • Series:QFET®
  • Package:Bulk
  • Part Status:Active
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:26mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
  • Vgs (Max):±25V
  • Input Capacitance (Ciss) (Max) @ Vds:3.6 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):62W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220F-3 (Y-Forming)
  • Package / Case:TO-220-3 Full Pack, Formed Leads

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