FQA13N80-F109
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionPOWER FIELD-EFFECT TRANSISTOR, 1
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet FQA13N80-F109 Datasheet
-
ECAD Model
- Share
In Stock: 258
Can ship immediately
Pricing:
- 1$1.93
- 10$1.72857
- 450$1.29336
- 900$1.05903
- 1,350$0.99208
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Technical Details
- Series:QFET®
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):800 V
- Current - Continuous Drain (Id) @ 25°C:12.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:750mOhm @ 6.3A, 10V
- Vgs(th) (Max) @ Id:5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:88 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:3.5 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):300W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-3PN
- Package / Case:TO-3P-3, SC-65-3
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