IGT60R190D1SATMA1

Technical Details

• Series:CoolGaN™
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss):600 V
• Current - Continuous Drain (Id) @ 25°C:12.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:-
• Vgs(th) (Max) @ Id:1.6V @ 960µA

• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):-10V
• Input Capacitance (Ciss) (Max) @ Vds:157 pF @ 400 V
• FET Feature:-
• Power Dissipation (Max):55.5W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:PG-HSOF-8-3
• Package / Case:8-PowerSFN