TPH1R712MD,L1Q
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 20V 60A 8SOP
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TPH1R712MD,L1Q Datasheet
-
ECAD Model
- Share
In Stock: 110
Can ship immediately
Pricing:
- 1$1.42
- 5,000$0.546
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Technical Details
- Series:U-MOSVI
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:1.7mOhm @ 30A, 4.5V
- Vgs(th) (Max) @ Id:1.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:182 nC @ 5 V
- Vgs (Max):±12V
- Input Capacitance (Ciss) (Max) @ Vds:10900 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):78W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:8-SOP Advance (5x5)
- Package / Case:8-PowerVDFN
