TPH2R506PL,L1Q
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 60V 100A 8SOP
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TPH2R506PL,L1Q Datasheet
-
ECAD Model
- Share
In Stock: 161
Can ship immediately
Pricing:
- 1$1.55
- 5,000$0.99097
Quote It
Technical Details
- Series:U-MOSIX-H
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:4.4mOhm @ 30A, 4.5V
- Vgs(th) (Max) @ Id:2.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:5435 pF @ 30 V
- FET Feature:-
- Power Dissipation (Max):132W (Tc)
- Operating Temperature:175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:8-SOP Advance (5x5)
- Package / Case:8-PowerVDFN
