IPD60N10S4L12ATMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 100V 60A TO252-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPD60N10S4L12ATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 136
Can ship immediately
Pricing:
- 1$1.6
- 2,500$0.56285
- 5,000$0.53471
- 12,500$0.51461
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Technical Details
- Series:Automotive, AEC-Q101, HEXFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:12mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id:2.1V @ 46µA
- Gate Charge (Qg) (Max) @ Vgs:49 nC @ 10 V
- Vgs (Max):±16V
- Input Capacitance (Ciss) (Max) @ Vds:3170 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):94W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TO252-3-313
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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