IRFH6200TRPBF

Technical Details

• Series:HEXFET®
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:49A (Ta), 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
• Rds On (Max) @ Id, Vgs:0.95mOhm @ 50A, 10V
• Vgs(th) (Max) @ Id:1.1V @ 150µA

• Gate Charge (Qg) (Max) @ Vgs:230 nC @ 4.5 V
• Vgs (Max):±12V
• Input Capacitance (Ciss) (Max) @ Vds:10890 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):3.6W (Ta), 156W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:8-PQFN (5x6)
• Package / Case:8-PowerVDFN