SCT10N120
STMicroelectronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionSICFET N-CH 1200V 12A HIP247
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SCT10N120 Datasheet
-
ECAD Model
- Share
In Stock: 181
Can ship immediately
Pricing:
- 1$9.29
- 10$8.59524
- 100$7.36881
- 600$6.63306
- 1,200$6.14255
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Technical Details
- Series:-
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss):1200 V
- Current - Continuous Drain (Id) @ 25°C:12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):20V
- Rds On (Max) @ Id, Vgs:690mOhm @ 6A, 20V
- Vgs(th) (Max) @ Id:3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:22 nC @ 20 V
- Vgs (Max):+25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds:290 pF @ 400 V
- FET Feature:-
- Power Dissipation (Max):150W (Tc)
- Operating Temperature:-55°C ~ 200°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:HiP247™
- Package / Case:TO-247-3
