RHU002N06T106
ROHM Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 60V 200MA UMT3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet RHU002N06T106 Datasheet
-
ECAD Model
- Share
In Stock: 180
Can ship immediately
Pricing:
- 1$0.38
- 3,000$0.06713
- 6,000$0.06042
- 15,000$0.05371
- 30,000$0.05035
- 75,000$0.04699
Quote It
Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Not For New Designs
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):4V, 10V
- Rds On (Max) @ Id, Vgs:2.4Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id:-
- Gate Charge (Qg) (Max) @ Vgs:4.4 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:15 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):200mW (Ta)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:UMT3
- Package / Case:SC-70, SOT-323
