SSM6H19NU,LF
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 40V 2A 6UDFN
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SSM6H19NU,LF Datasheet
-
ECAD Model
- Share
In Stock: 164
Can ship immediately
Pricing:
- 1$0.39
- 3,000$0.1033
- 6,000$0.09704
- 15,000$0.09078
- 30,000$0.08765
Quote It
Technical Details
- Series:U-MOSVII-H
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):40 V
- Current - Continuous Drain (Id) @ 25°C:2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):1.8V, 8V
- Rds On (Max) @ Id, Vgs:185mOhm @ 1A, 8V
- Vgs(th) (Max) @ Id:1.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:2.2 nC @ 4.2 V
- Vgs (Max):±12V
- Input Capacitance (Ciss) (Max) @ Vds:130 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):1W (Ta)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:6-UDFN (2x2)
- Package / Case:6-UDFN Exposed Pad
Related Products
MOSFET P-CH 20V 4.3A SOT23
- 1: $0.50000
MOSFET P-CH 20V 4.5A SOT23-3
- 1: $0.52000
