VN2110K1-G
Microchip Technology
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 100V 200MA SOT23-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet VN2110K1-G Datasheet
-
ECAD Model
- Share
In Stock: 3,126
Can ship immediately
Pricing:
- 1$0.5
- 3,000$0.33709
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:200mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On):5V, 10V
- Rds On (Max) @ Id, Vgs:4Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:-
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):360mW (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:SOT-23-3
- Package / Case:TO-236-3, SC-59, SOT-23-3
