IPD180N10N3GATMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 100V 43A TO252-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPD180N10N3GATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 152
Can ship immediately
Pricing:
- 1$1.14
- 2,500$0.50333
- 5,000$0.47816
- 12,500$0.46018
Quote It
Technical Details
- Series:OptiMOS™
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:43A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):6V, 10V
- Rds On (Max) @ Id, Vgs:18mOhm @ 33A, 10V
- Vgs(th) (Max) @ Id:3.5V @ 33µA
- Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 50 V
- FET Feature:-
- Power Dissipation (Max):71W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TO252-3
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
MOSFET N-CH 30V 20A/100A 8VSON
- 1: $1.24000
- 2500: $0.51523
MOSFET N-CH 30V 35A 8VSON
- 1: $0.87000
- 250: $0.52449
- 500: $0.44801
