SI4477DY-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 20V 26.6A 8SO
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SI4477DY-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 121
Can ship immediately
Pricing:
- 1$1.52
- 2,500$0.71223
- 5,000$0.67879
- 12,500$0.6549
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Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:26.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:6.2mOhm @ 18A, 4.5V
- Vgs(th) (Max) @ Id:1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:190 nC @ 10 V
- Vgs (Max):±12V
- Input Capacitance (Ciss) (Max) @ Vds:4600 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):3W (Ta), 6.6W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:8-SO
- Package / Case:8-SOIC (0.154", 3.90mm Width)
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