C2M1000170J

Technical Details

• Series:C2M™
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss):1700 V
• Current - Continuous Drain (Id) @ 25°C:5.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):20V
• Rds On (Max) @ Id, Vgs:1.4Ohm @ 2A, 20V
• Vgs(th) (Max) @ Id:3.1V @ 500µA (Typ)

• Gate Charge (Qg) (Max) @ Vgs:13 nC @ 20 V
• Vgs (Max):+25V, -10V
• Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 1000 V
• FET Feature:-
• Power Dissipation (Max):78W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:D2PAK (7-Lead)
• Package / Case:TO-263-7 (Straight Leads)