SCTW70N120G2V

Technical Details

• Series:-
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss):1200 V
• Current - Continuous Drain (Id) @ 25°C:91A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):18V
• Rds On (Max) @ Id, Vgs:30mOhm @ 50A, 18V
• Vgs(th) (Max) @ Id:4.9V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:150 nC @ 18 V
• Vgs (Max):+22V, -10V
• Input Capacitance (Ciss) (Max) @ Vds:3540 pF @ 800 V
• FET Feature:-
• Power Dissipation (Max):547W (Tc)
• Operating Temperature:-55°C ~ 200°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:HiP247™
• Package / Case:TO-247-3