SSM6J414TU,LF
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P CH 20V 6A UF6
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SSM6J414TU,LF Datasheet
-
ECAD Model
- Share
In Stock: 138
Can ship immediately
Pricing:
- 1$0.51
- 3,000$0.13739
- 6,000$0.12906
- 15,000$0.12073
- 30,000$0.11657
Quote It
Technical Details
- Series:U-MOSVI
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:22.5mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id:1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:23.1 nC @ 4.5 V
- Vgs (Max):±8V
- Input Capacitance (Ciss) (Max) @ Vds:1650 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):1W (Ta)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:UF6
- Package / Case:6-SMD, Flat Leads
