FQU4N50TU-WS
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 500V 2.6A IPAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet FQU4N50TU-WS Datasheet
-
ECAD Model
- Share
In Stock: 193
Can ship immediately
Pricing:
- 1$0.95
- 10$0.84496
- 100$0.6724
- 500$0.5263
- 1,000$0.42009
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Technical Details
- Series:QFET®
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):500 V
- Current - Continuous Drain (Id) @ 25°C:2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:2.7Ohm @ 1.3A, 10V
- Vgs(th) (Max) @ Id:5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:460 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):2.5W (Ta), 45W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:I-PAK
- Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
