TK58E06N1,S1X
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 60V 58A TO220
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TK58E06N1,S1X Datasheet
-
ECAD Model
- Share
In Stock: 133
Can ship immediately
Pricing:
- 1$1.39
- 50$1.11532
- 100$0.9759
- 500$0.75682
- 1,000$0.59749
- 2,500$0.55766
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Technical Details
- Series:U-MOSVIII-H
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:58A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:5.4mOhm @ 29A, 10V
- Vgs(th) (Max) @ Id:4V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:3400 pF @ 30 V
- FET Feature:-
- Power Dissipation (Max):110W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220
- Package / Case:TO-220-3
