TK8R2A06PL,S4X
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 60V 50A TO220SIS
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TK8R2A06PL,S4X Datasheet
-
ECAD Model
- Share
In Stock: 113
Can ship immediately
Pricing:
- 1$1.64
- 50$1.30828
- 100$1.1448
- 500$0.88777
- 1,000$0.70087
- 2,500$0.65414
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Technical Details
- Series:U-MOSIX-H
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:11.4mOhm @ 8A, 4.5V
- Vgs(th) (Max) @ Id:2.5V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs:28.4 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1990 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):36W (Tc)
- Operating Temperature:175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220SIS
- Package / Case:TO-220-3 Full Pack
