2SJ661-1E
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 60V 38A TO262-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet 2SJ661-1E Datasheet
-
ECAD Model
- Share
In Stock: 14,763
Can ship immediately
Pricing:
- 1$2.36
- 50$1.9058
- 100$1.7152
- 500$1.33402
- 1,000$1.10534
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Technical Details
- Series:-
- Package:Tube
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:38A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):4V, 10V
- Rds On (Max) @ Id, Vgs:39mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id:-
- Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:4360 pF @ 20 V
- FET Feature:-
- Power Dissipation (Max):1.65W (Ta), 65W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-262-3
- Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
