SIHB12N65E-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 650V 12A D2PAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SIHB12N65E-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 118
Can ship immediately
Pricing:
- 1$3.07
- 10$2.78427
- 100$2.25469
- 500$1.77309
- 1,000$1.48414
- 3,000$1.38782
- 5,000$1.33967
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Technical Details
- Series:-
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):650 V
- Current - Continuous Drain (Id) @ 25°C:12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:380mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:70 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:1224 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):156W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:D²PAK (TO-263)
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
