TK31E60X,S1X
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 600V 30.8A TO220
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TK31E60X,S1X Datasheet
-
ECAD Model
- Share
In Stock: 179
Can ship immediately
Pricing:
- 1$5.4
- 50$4.3404
- 100$3.95449
- 500$3.20217
- 1,000$2.70062
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Technical Details
- Series:DTMOSIV-H
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:30.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:88mOhm @ 9.4A, 10V
- Vgs(th) (Max) @ Id:3.5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs:65 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:3000 pF @ 300 V
- FET Feature:Super Junction
- Power Dissipation (Max):230W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220
- Package / Case:TO-220-3
