SI8812DB-T2-E1

Vishay / Siliconix
In Stock: 193

Can ship immediately

Pricing:
  • 1$0.46
  • 3,000$0.17832
  • 6,000$0.16746
  • 15,000$0.15659
  • 30,000$0.14899
  • 75,000$0.14819

Quote It

Technical Details

  • Series:TrenchFET®
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:2.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
  • Rds On (Max) @ Id, Vgs:59mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:17 nC @ 8 V
  • Vgs (Max):±5V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):500mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:4-Microfoot
  • Package / Case:4-UFBGA

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