SI8812DB-T2-E1
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 20V 4MICROFOOT
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SI8812DB-T2-E1 Datasheet
-
ECAD Model
- Share
In Stock: 193
Can ship immediately
Pricing:
- 1$0.46
- 3,000$0.17832
- 6,000$0.16746
- 15,000$0.15659
- 30,000$0.14899
- 75,000$0.14819
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Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
- Rds On (Max) @ Id, Vgs:59mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id:1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:17 nC @ 8 V
- Vgs (Max):±5V
- Input Capacitance (Ciss) (Max) @ Vds:-
- FET Feature:-
- Power Dissipation (Max):500mW (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:4-Microfoot
- Package / Case:4-UFBGA
