TK3A60DA(Q,M)
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 600V 2.5A TO220SIS
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TK3A60DA(Q,M) Datasheet
-
ECAD Model
- Share
In Stock: 180
Can ship immediately
Pricing:
- 1$1.26
- 50$1.01175
- 100$0.88533
- 500$0.68655
- 1,000$0.54201
- 2,500$0.50587
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Technical Details
- Series:π-MOSVII
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:2.8Ohm @ 1.3A, 10V
- Vgs(th) (Max) @ Id:4.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:9 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:380 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):30W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220SIS
- Package / Case:TO-220-3 Full Pack
