SIHD2N80E-GE3

Technical Details

• Series:E
• Package:Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):800 V
• Current - Continuous Drain (Id) @ 25°C:2.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:2.75Ohm @ 1A, 10V
• Vgs(th) (Max) @ Id:4V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:19.6 nC @ 10 V
• Vgs (Max):±30V
• Input Capacitance (Ciss) (Max) @ Vds:315 pF @ 100 V
• FET Feature:-
• Power Dissipation (Max):62.5W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:D-PAK (TO-252AA)
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63