SIHB24N65EF-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 650V 24A D2PAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SIHB24N65EF-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 125
Can ship immediately
Pricing:
- 1$6.3
- 10$5.64524
- 100$4.66475
- 500$3.81499
- 1,000$3.24849
- 3,000$3.09597
Quote It
Technical Details
- Series:E
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):650 V
- Current - Continuous Drain (Id) @ 25°C:24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:156mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:122 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:2774 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):250W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:D²PAK (TO-263)
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
