RMA7N20ED1

Technical Details

• Series:-
• Package:Tape & Reel (TR)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:700mA (Tc)
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
• Rds On (Max) @ Id, Vgs:260mOhm @ 500mA, 4.5V
• Vgs(th) (Max) @ Id:1.2V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):550mW (Ta)
• Operating Temperature:-50°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:DFN1006-3
• Package / Case:SC-101, SOT-883