RM2312

Technical Details

• Series:-
• Package:Tape & Reel (TR)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:4.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
• Rds On (Max) @ Id, Vgs:33mOhm @ 4.5A, 4.5V
• Vgs(th) (Max) @ Id:1.2V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):±12V
• Input Capacitance (Ciss) (Max) @ Vds:500 pF @ 8 V
• FET Feature:-
• Power Dissipation (Max):1.25W (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:SOT-23
• Package / Case:TO-236-3, SC-59, SOT-23-3